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Proceedings Paper

High-power visible semiconductor lasers
Author(s): Masayuki Ishikawa; Kazuhiko Itaya; Masaki Okajima; Gen-ichi Hatakoshi
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Paper Abstract

This paper reviews the recent progress of the 0.6 micrometers wavelength range high power InGaAlP visible light lasers. A fundamental transverse mode cw oscillation was achieved over 40 mW for the transverse mode stabilized structure fabricated by metalorganic chemical vapor deposition. Stable operations over 5000 hours were attained under the condition of 10 mW output power and 40 degree(s)C ambient temperature. High power operation over 80 mW was achieved for a window structure InGaAlP laser which was made in a very unique and simple fabrication process using a bandgap energy change phenomena by the atomic ordering change of this material.

Paper Details

Date Published: 1 July 1991
PDF: 9 pages
Proc. SPIE 1418, Laser Diode Technology and Applications III, (1 July 1991); doi: 10.1117/12.43820
Show Author Affiliations
Masayuki Ishikawa, Toshiba Corp. (Japan)
Kazuhiko Itaya, Toshiba Corp. (Japan)
Masaki Okajima, Toshiba Corp. (Japan)
Gen-ichi Hatakoshi, Toshiba Corp. (Japan)


Published in SPIE Proceedings Vol. 1418:
Laser Diode Technology and Applications III
Daniel S. Renner, Editor(s)

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