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Proceedings Paper

High-frequency 1.3 um InGaAsP semi-insulating buried crescent lasers for analog applications
Author(s): Wood-Hi Cheng; Ami Appelbaum; Rong-Ting Huang; Daniel S. Renner; Ken R. Cioffi
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Paper Abstract

The fabrication and performance of high-speed and low relative intensity noise (RIN) 1.3 micrometers InGaAsP semi-insulating buried crescent (SIBC) Fabry-Perot (FP) lasers with Zn- doped active layers are reported. These SIBC lasers have a 3-dB modulation bandwidth of 19 GHz for pulsed operation and 16 GHz for cw operation, and a RIN below -150 dB/Hz for biased current at 120 mA. This is the highest modulation bandwidth yet reported for InGaAsP lasers with semi-insulating current blocking layers.

Paper Details

Date Published: 1 July 1991
PDF: 5 pages
Proc. SPIE 1418, Laser Diode Technology and Applications III, (1 July 1991); doi: 10.1117/12.43819
Show Author Affiliations
Wood-Hi Cheng, Rockwell International Corp. (United States)
Ami Appelbaum, Rockwell International Corp. (Israel)
Rong-Ting Huang, Rockwell International Corp. (Taiwan)
Daniel S. Renner, Rockwell International Corp. (United States)
Ken R. Cioffi, Rockwell International Corp. (United States)

Published in SPIE Proceedings Vol. 1418:
Laser Diode Technology and Applications III
Daniel S. Renner, Editor(s)

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