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Proceedings Paper

Characterization of GRIN-SCH-SQW amplifiers
Author(s): John M. Haake; Mark S. Zediker; Chet L. Balestra; Danny J. Krebs; Joseph L. Levy
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Paper Abstract

The performance of AlGaAs/GaAs GRIN-SCH-SQW ridge waveguide amplifiers has been characterized as a function of the rib-width, the amplifier bias and the master oscillator injection power. The results of this study revealed that the mode width is weakly dependent on the rib-width, the bias voltage increases with the injection signal level, and the 3 dB gain bandwidth is approximately 45 nm.

Paper Details

Date Published: 1 July 1991
PDF: 11 pages
Proc. SPIE 1418, Laser Diode Technology and Applications III, (1 July 1991); doi: 10.1117/12.43814
Show Author Affiliations
John M. Haake, McDonnell Douglas Electronic Systems Co. (United States)
Mark S. Zediker, McDonnell Douglas Electronic Systems Co. (United States)
Chet L. Balestra, McDonnell Douglas Electronic Systems Co. (United States)
Danny J. Krebs, McDonnell Douglas Electronic Systems Co. (United States)
Joseph L. Levy, McDonnell Douglas Electronic Systems Co. (United States)


Published in SPIE Proceedings Vol. 1418:
Laser Diode Technology and Applications III
Daniel S. Renner, Editor(s)

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