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Proceedings Paper

High-power single-element pseudomorphic InGaAs/GaAs/AlGaAs single-quantum-well lasers for pumping Er-doped fiber amplifiers
Author(s): Anders G. Larsson; Siamak Forouhar; Jeffrey G. Cody; Robert J. Lang; Peter A. Andrekson
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Paper Abstract

A 980 nm ridge waveguide pseudomorphic InGaAs/GaAs/AlGaAs single quantum well laser with a maximum single-ended output power of 240 mW from a facet coated device has been fabricated from a graded index separate confinement heterostructure grown by molecular beam epitaxy. The laser oscillates in the fundamental spatial mode, allowing 22% coupling efficiency into a 1.55 micrometers single-mode optical fiber. Life testing at an output power of 30 mW per facet from uncoated devices reveals a superior reliability to GaAs/AlGaAs quantum well lasers but also the need for protective facet coatings for long term reliability at power levels required for pumping Er-doped fiber amplifiers.

Paper Details

Date Published: 1 July 1991
PDF: 6 pages
Proc. SPIE 1418, Laser Diode Technology and Applications III, (1 July 1991); doi: 10.1117/12.43813
Show Author Affiliations
Anders G. Larsson, Jet Propulsion Lab. (Sweden)
Siamak Forouhar, Jet Propulsion Lab. (United States)
Jeffrey G. Cody, Jet Propulsion Lab. (United States)
Robert J. Lang, SDL, Inc. (United States)
Peter A. Andrekson, AT&T Bell Labs. (Sweden)

Published in SPIE Proceedings Vol. 1418:
Laser Diode Technology and Applications III
Daniel S. Renner, Editor(s)

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