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Proceedings Paper

Evaluation of diode laser failure mechanisms and factors influencing reliability
Author(s): John A. Baumann; Allan H. Shepard; Robert G. Waters; Steven L. Yellen; Charlton M. Harding; Harvey B. Serreze
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Paper Abstract

A number of recent observations promise to have a significant impact on semiconductor laser reliability. Device life has been seen to depend on device architecture and processing, epitaxial structure and growth parameters, and alloy chemistry. Comparative studies have shown that dry-etched devices are at least as reliable as oxide-defined lasers, and that median life is a function of the quantum well count in the structure. Improved reliability has also been obtained by using longer cavity devices to improve thermal performance at the lasing junction. Elimination or reduction in the occurrence of sudden or freak failures which limit median life of diodes has been achieved by studying the factors influencing the growth and propagation of dark line defects (DLDs). Operating temperature, chip geometry, alloy effects, and epitaxial growth parameters have all been shown to affect device reliability.

Paper Details

Date Published: 1 July 1991
PDF: 10 pages
Proc. SPIE 1418, Laser Diode Technology and Applications III, (1 July 1991); doi: 10.1117/12.43811
Show Author Affiliations
John A. Baumann, McDonnell Douglas Electronic Systems Co. (United States)
Allan H. Shepard, McDonnell Douglas Electronic Systems Co. (United States)
Robert G. Waters, McDonnell Douglas Electronic Systems Co. (United States)
Steven L. Yellen, McDonnell Douglas Electronic Systems Co. (United States)
Charlton M. Harding, McDonnell Douglas Electronic Systems Co. (United States)
Harvey B. Serreze, McDonnell Douglas Electronic Systems Co. (United States)


Published in SPIE Proceedings Vol. 1418:
Laser Diode Technology and Applications III
Daniel S. Renner, Editor(s)

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