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Proceedings Paper

InGaAs-GaAs strained layer lasers: physics and reliability
Author(s): James J. Coleman; Robert G. Waters; David P. Bour
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Paper Abstract

Strained-layer (In)GaAs laser technology is being pursued at a number of laboratories with a view to extending the emission spectrum to longer wavelengths and exploiting strain-induced band-structure effects. Recently, remarkable longevity has been demonstrated for such devices and the implications for existing applications should insure continued research activity. Moreover, all of the key laser performance parameters -- efficiency, threshold current density and characteristic temperature -- have matched or exceeded their values for high-quality GaAs quantum wells. Evidence is mounting that the degradation phenomenology in pseudomorphic InGaAs lasers is radically different than in GaAs -- and for the better. Dark-line growth is inhibited, the derivative 'freak' failures cease to limit the lifetime and gradual degradation rates are tolerably low. This leads to the prospect of unity yield and 100% survival without benefit of costly burn-in procedures. Documented (extrapolated) lifetimes of 14,000 (50,000) hours are reported.

Paper Details

Date Published: 1 July 1991
PDF: 10 pages
Proc. SPIE 1418, Laser Diode Technology and Applications III, (1 July 1991); doi: 10.1117/12.43810
Show Author Affiliations
James J. Coleman, Univ. of Illinois/Urbana-Champaign (United States)
Robert G. Waters, McDonnell Douglas Electronic Systems Co. (United States)
David P. Bour, David Sarnoff Research Ctr. (United States)


Published in SPIE Proceedings Vol. 1418:
Laser Diode Technology and Applications III
Daniel S. Renner, Editor(s)

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