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Proceedings Paper

Technique for measuring stress-induced birefringence
Author(s): Jeffrey R. Heidel; Mark S. Zediker
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Paper Abstract

A technique has been developed to generate an image of the stress-induced birefringence which occurs in AlGaAs/GaAs ridge waveguides. Cross-sections of this image can be taken to yield quantitative results. A preliminary cross-sectional plot from a ridge waveguide shows that the birefringence is higher at the ridge edges due to stress caused by the waveguide structure, and agrees with the shape predicted by theory.

Paper Details

Date Published: 1 July 1991
PDF: 8 pages
Proc. SPIE 1418, Laser Diode Technology and Applications III, (1 July 1991); doi: 10.1117/12.43809
Show Author Affiliations
Jeffrey R. Heidel, McDonnell Douglas Electronic Systems Co. (United States)
Mark S. Zediker, McDonnell Douglas Electronic Systems Co. (United States)


Published in SPIE Proceedings Vol. 1418:
Laser Diode Technology and Applications III
Daniel S. Renner, Editor(s)

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