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Proceedings Paper

Mirror fabrication for full-wafer laser technology
Author(s): David J. Webb; Melvin K. Benedict; Gian-Luca Bona; Peter L. Buchmann; K. Daetwyler; H. P. Dietrich; Michael Moser; G. Sasso; Peter Vettiger; O. Voegeli
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Paper Abstract

The fabrication of etched mirrors for AlGaAs semiconductor lasers is described. The coating techniques for the passivation and reflectivity modification of the etched mirror surfaces are presented. Measurements on coated lasers show excellent beam quality, and satisfactory uniformity of laser characteristics across a wafer. Lasers which operate in a single transverse mode at output powers up to about 50 mW and have catastrophic optical damage (COD) thresholds greater than 120 mW have also been demonstrated.

Paper Details

Date Published: 1 July 1991
PDF: 9 pages
Proc. SPIE 1418, Laser Diode Technology and Applications III, (1 July 1991); doi: 10.1117/12.43808
Show Author Affiliations
David J. Webb, IBM/Zurich Research Lab. (Switzerland)
Melvin K. Benedict, IBM/Zurich Research Lab. (United States)
Gian-Luca Bona, IBM/Zurich Research Lab. (Switzerland)
Peter L. Buchmann, IBM/Zurich Research Lab. (Switzerland)
K. Daetwyler, IBM/Zurich Research Lab. (Switzerland)
H. P. Dietrich, IBM/Zurich Research Lab. (Switzerland)
Michael Moser, IBM/Zurich Research Lab. (Switzerland)
G. Sasso, IBM/Zurich Research Lab. (Switzerland)
Peter Vettiger, IBM/Zurich Research Lab. (Switzerland)
O. Voegeli, IBM/Zurich Research Lab. (United States)

Published in SPIE Proceedings Vol. 1418:
Laser Diode Technology and Applications III
Daniel S. Renner, Editor(s)

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