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Proceedings Paper

Long-wavelength lasers and detectors fabricated on InP/GaAs superheteroepitaxial wafer
Author(s): Masao Aiga; Etsuji Omura
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Paper Abstract

InGaAsP laser diodes and InGaAs photodiodes grown on GaAs substrates have been reviewed. The laser diodes exhibit low threshold current of 31 mA and high slope efficiency of 0.2 W/A which are comparable with the diodes grown on InP substrates. The InGaAs photodiodes also show the comparable characteristics with the photodiodes grown on InP substrates. A GaAs MESFET and an InGaAs photodiode have been monolithically integrated. This receiver OEIC has sensitivity of -28.1 dBm at transmission rate of 622 Mb/s with a bit error rate of 10-9.

Paper Details

Date Published: 1 July 1991
PDF: 6 pages
Proc. SPIE 1418, Laser Diode Technology and Applications III, (1 July 1991); doi: 10.1117/12.43806
Show Author Affiliations
Masao Aiga, Mitsubishi Electric Corp. (Japan)
Etsuji Omura, Mitsubishi Electric Corp. (Japan)


Published in SPIE Proceedings Vol. 1418:
Laser Diode Technology and Applications III
Daniel S. Renner, Editor(s)

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