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Proceedings Paper

Applications of dry etching to InP-based laser fabrication
Author(s): Todd R. Hayes; Sung-June Kim; Christian A. Green
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Paper Abstract

This paper reviews applications of dry etching to the fabrication of InP-based laser diodes. The plasma and ion beam processing techniques and chemistries used to etch InP, InGaAs and InGaAsP are briefly described. The application of these techniques to the fabrication of gratings (for distributed feedback lasers), active stripe mesas and channels, facets, and angled mirrors is then reviewed. The authors concentrate on dry etched/wet etched device performance and reliability comparisons for buried heterostructure devices, and process improvements afforded by dry etching.

Paper Details

Date Published: 1 July 1991
PDF: 13 pages
Proc. SPIE 1418, Laser Diode Technology and Applications III, (1 July 1991); doi: 10.1117/12.43804
Show Author Affiliations
Todd R. Hayes, AT&T Bell Labs. (United States)
Sung-June Kim, AT&T Bell Labs. (South Korea)
Christian A. Green, AT&T Bell Labs. (United States)

Published in SPIE Proceedings Vol. 1418:
Laser Diode Technology and Applications III
Daniel S. Renner, Editor(s)

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