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Proceedings Paper

Predicting diode laser performance
Author(s): G. Lim; Youngsoh Park; C. A. Zmudzinski; Peter S. Zory; L. M. Miller; Timothy M. Cockerill; James J. Coleman; Chi-Shain Hong; Luis Figueroa
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Paper Abstract

Predictions of the threshold current density of GaAs/AlGaAs graded refractive index (GRIN), separate confinement heterostructure (SCH), single potential well (SW) diode lasers at 25 degree(s)C and 125 degree(s)C using strict k-selection theory are made. A reasonable fit to the experimental data at both temperatures can be obtained without including carrier scattering. It is concluded that good predictions of threshold current density and differential quantum efficiency can be made provided one knows how to predict the temperature dependence of internal quantum efficiency.

Paper Details

Date Published: 1 July 1991
PDF: 9 pages
Proc. SPIE 1418, Laser Diode Technology and Applications III, (1 July 1991); doi: 10.1117/12.43800
Show Author Affiliations
G. Lim, Univ. of Florida (United States)
Youngsoh Park, Univ. of Florida (United States)
C. A. Zmudzinski, Univ. of Florida (United States)
Peter S. Zory, Univ. of Florida (United States)
L. M. Miller, Univ. of Illinois/Urbana-Champaign (United States)
Timothy M. Cockerill, Univ. of Illinois/Urbana-Champaign (United States)
James J. Coleman, Univ. of Illinois/Urbana-Champaign (United States)
Chi-Shain Hong, Boeing Electronics High Technology Ctr. (United States)
Luis Figueroa, Boeing Electronics High Technology Ctr. (United States)

Published in SPIE Proceedings Vol. 1418:
Laser Diode Technology and Applications III
Daniel S. Renner, Editor(s)

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