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Proceedings Paper

Strained quantum-well leaky-mode diode laser arrays
Author(s): T. H. Shiau; Shang Zhu Sun; Christian F. Schaus; Kang Zheng; G. Ronald Hadley; John P. Hohimer
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Paper Abstract

A new type of diode laser array (denoted 'leaky-mode' or 'antiguided') has recently been reported. Despite their success, these devices are difficult to fabricate since they require a deep wet-chemical etch which must be accurately controlled. The authors report a new strained GaInAs quantum well device structure which is produced by etching a thin (0.12 micrometers ), transparent GaAs waveguide layer. These devices have demonstrated fundamental mode operation up to 2A (172 mW/facet at 1A) at 1% duty cycle pulsed condition and 700 mA (62.5 mW/facet) for cw operation.

Paper Details

Date Published: 1 July 1991
PDF: 7 pages
Proc. SPIE 1418, Laser Diode Technology and Applications III, (1 July 1991); doi: 10.1117/12.43799
Show Author Affiliations
T. H. Shiau, Univ. of New Mexico (United States)
Shang Zhu Sun, Univ. of New Mexico (United States)
Christian F. Schaus, Univ. of New Mexico (United States)
Kang Zheng, Univ. of New Mexico (United States)
G. Ronald Hadley, Sandia National Labs. (United States)
John P. Hohimer, Sandia National Labs. (United States)

Published in SPIE Proceedings Vol. 1418:
Laser Diode Technology and Applications III
Daniel S. Renner, Editor(s)

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