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Proceedings Paper

Optimization of strained layer InGaAs/GaAs quantum-well lasers
Author(s): Richard J. Fu; Chi-Shain Hong; Eric Y. Chan; Dan J. Booher; Luis Figueroa
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Paper Abstract

InGaAs/GaAs strained-layer quantum well (SQW) laser structures have been investigated for avionic applications requiring high-temperature performance. These lasers offer availability of wavelengths in the range of 0.9-1.1 micrometers for important applications in Er-doped fiber amplifiers and optoelectronic integrated circuits. For the first time, InGaAs/GaAs SQW lasers capable of cw operation up to 200 degree(s)C have been successfully demonstrated. The lasers show threshold current density of 200 A/cm2, differential quantum efficiency of 60%, output power of approximately equals 1 W for 50-micrometers oxide-stripe and 120 mW for 3-micrometers ridge- waveguide lasers, and characteristic temperature (TO) of 130-140K. In this paper, the optimization of the stripe width, orientation and cavity length for the laser performance have been studied. The characteristics of these devices are described. Measured I-V, L-I, spectrum, farfield pattern and reliability data are presented.

Paper Details

Date Published: 1 July 1991
PDF: 8 pages
Proc. SPIE 1418, Laser Diode Technology and Applications III, (1 July 1991); doi: 10.1117/12.43798
Show Author Affiliations
Richard J. Fu, Boeing Electronics High Technology Ctr. (United States)
Chi-Shain Hong, Boeing Electronics High Technology Ctr. (United States)
Eric Y. Chan, Boeing Electronics High Technology Ctr. (United States)
Dan J. Booher, Boeing Electronics High Technology Ctr. (United States)
Luis Figueroa, Boeing Electronics High Technology Ctr. (United States)


Published in SPIE Proceedings Vol. 1418:
Laser Diode Technology and Applications III
Daniel S. Renner, Editor(s)

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