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Proceedings Paper

Experimental determination of recombination mechanisms in strained and unstrained quantum-well lasers
Author(s): William C. Rideout
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Paper Abstract

Carrier recombination rates are measured in both strained and unstrained quantum well lasers, and as far as possible the various physical mechanisms behind these recombination rates are separated out. The effect of Auger recombination on the higher than expected temperature sensitivity of threshold of 1.5 micrometers quantum well lasers is also examined.

Paper Details

Date Published: 1 July 1991
PDF: 9 pages
Proc. SPIE 1418, Laser Diode Technology and Applications III, (1 July 1991); doi: 10.1117/12.43797
Show Author Affiliations
William C. Rideout, GTE Labs. Inc. (United States)


Published in SPIE Proceedings Vol. 1418:
Laser Diode Technology and Applications III
Daniel S. Renner, Editor(s)

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