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Proceedings Paper

Novel distributed feedback structure for surface-emitting semiconductor lasers
Author(s): A. Mohammed Mahbobzadeh; Marek Osinski
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Paper Abstract

A novel distributed feedback structure for wavelength-resonant surface-emitting semiconductor lasers is proposed and demonstrated. Compared to earlier resonant-periodic-gain devices, the total thickness of the new structure can be considerably smaller while retaining the characteristic features of the resonant-periodic-gain active medium. Room-temperature cw and pulsed operation of first distributed-feedback resonant-periodic-gain AlGaAs/GaAs/AlAs laser is reported.

Paper Details

Date Published: 1 July 1991
PDF: 7 pages
Proc. SPIE 1418, Laser Diode Technology and Applications III, (1 July 1991); doi: 10.1117/12.43791
Show Author Affiliations
A. Mohammed Mahbobzadeh, Univ. of New Mexico (United States)
Marek Osinski, Univ. of New Mexico (United States)

Published in SPIE Proceedings Vol. 1418:
Laser Diode Technology and Applications III
Daniel S. Renner, Editor(s)

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