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Proceedings Paper

All-optical AND and NAND gates using cross-polarization modulation in a semiconductor optical amplifier
Author(s): Horacio Soto; C. A. Diaz
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Paper Abstract

In this paper, we demonstrate experimentally the fulfillment of al-optical AND and NAND gates using the cross- polarization modulator effect in a semiconductor optical amplifier. The efficiency of this effect was estimated by measuring the conversion coefficients indicating the TE to TM mode conversion and vice versa when the amplifier is perturbed with a wavelength tunable control beam.

Paper Details

Date Published: 14 August 2001
PDF: 4 pages
Proc. SPIE 4419, 4th Iberoamerican Meeting on Optics and 7th Latin American Meeting on Optics, Lasers, and Their Applications, (14 August 2001); doi: 10.1117/12.437212
Show Author Affiliations
Horacio Soto, Ctr. de Investigacion Cientifica y de Educacion Superior de Ensenada (Mexico)
C. A. Diaz, Ctr. de Investigacion Cientifica y de Educacion Superior de Ensenada (Mexico)


Published in SPIE Proceedings Vol. 4419:
4th Iberoamerican Meeting on Optics and 7th Latin American Meeting on Optics, Lasers, and Their Applications

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