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Proceedings Paper

Optoelectronic design of an infrared detector
Author(s): Arllene Mariana Perez; Rubi Salazar; Alfonso Torres; Francisco Renero
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Paper Abstract

In this work we present some results obtained on the design and fabrication of Schottky barrier photodetector. The derive is suitable for operation in the IR zone of the electromagnetic spectrum. This device is fabricated by using a Silicon-Germanium amorphous alloy on p-type crystalline silicon. The device operates in the range 1.0-4.5 micrometers . Also we present some optical design for applications in the device operation range wavelength.

Paper Details

Date Published: 14 August 2001
PDF: 4 pages
Proc. SPIE 4419, 4th Iberoamerican Meeting on Optics and 7th Latin American Meeting on Optics, Lasers, and Their Applications, (14 August 2001); doi: 10.1117/12.437141
Show Author Affiliations
Arllene Mariana Perez, Instituto Nacional de Astrofisica, Optica y Electronica (Mexico)
Rubi Salazar, Instituto Nacional de Astrofisica, Optica y Electronica (Mexico)
Alfonso Torres, Instituto Nacional de Astrofisica, Optica y Electronica (Mexico)
Francisco Renero, Instituto Nacional de Astrofisica, Optica y Electronica (Mexico)


Published in SPIE Proceedings Vol. 4419:
4th Iberoamerican Meeting on Optics and 7th Latin American Meeting on Optics, Lasers, and Their Applications

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