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Proceedings Paper

ArF resist for contact hole application
Author(s): K. Rex Chen; Margaret C. Lawson; Timothy Hughes; William R. Brunsvold; Pushkara Rao Varanasi; Robin Keller; George M. Jordhamo
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Paper Abstract

In building the cyclic olefin addition polymer as a potential platform for 193nm contact hole application, we have encountered an unusual bottlenecking or lipping profile. We have investigated the causes and possible cures of this lipping profile in contact hole printing. The lipping was found to be tool dependent, mask dependent as well as duty cycle dependent. Several treatments were evaluated in terms of their ability to reduce or eliminate the lipping profile. These included various flood exposures, pre wet during development, the use of additives in the resist formulation and various surfactants added to TMAH developer. Among them, the most effective way to eliminate the lip profile was found to be modification of the developer by the addition of surfactants. A proper surfactant was selected to provide better wetting for the resist which resulted in the elimination of the lip profile. In addition, resist formulation changes were also beneficial in reducing the lipping profile. This study will present the results of designed experiments which investigated several different treatments and the resultant impact on profile quality.

Paper Details

Date Published: 24 August 2001
PDF: 7 pages
Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); doi: 10.1117/12.436910
Show Author Affiliations
K. Rex Chen, IBM Microelectronics Div. (United States)
Margaret C. Lawson, IBM Microelectronics Div. (United States)
Timothy Hughes, IBM Microelectronics Div. (United States)
William R. Brunsvold, IBM Microelectronics Div. (United States)
Pushkara Rao Varanasi, IBM Microelectronics Div. (United States)
Robin Keller, IBM Microelectronics Div. (United States)
George M. Jordhamo, IBM Microelectronics Div. (United States)

Published in SPIE Proceedings Vol. 4345:
Advances in Resist Technology and Processing XVIII
Francis M. Houlihan, Editor(s)

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