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Proceedings Paper

Novel 193-nm photoresist based on Olefin-containing lactones
Author(s): Kwang-Sub Yoon; Dong-Won Jung; Sook Lee; Sung-Ho Lee; Sang-Jun Choi; Sang-Gyun Woo; Joo-Tae Moon
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Paper Abstract

In this work we have studied new types of olefin-containing alicyclic lactones such as (alpha) -angelicalactone(AGL), (gamma) -methylene- (gamma) -butyrolactone((gamma) -MBL), (alpha) -methylene- (gamma) -butyrolactone((alpha) -MBL) and their derivatives. Particular attention was given to (alpha) -BML derivatives, which are readily synthesized. The relative monomer reactivities of the various lactones were found to be quite different. However in the case of (alpha) -MBL and its derivatives they have good radical reactivities with methacrylates and maleic anhydride. Methacrylate derivatives with acid-labile protecting groups were introduced for dissolution contrast. To further promote adhesion the relative ratios of maleic anhydride and norbornylene derivatives was optimized. These novel resists resolve 120nm L/S with conventional illumination (NA=0.6, (sigma) =0.7) and 0.6micrometers DOF with annular illumination (NA=0.6, (sigma) $=0.6/0.8). And also 100nm L/S resolution was achieved using strong off-axis illumination. Oxide etch resistance was found to be equivalent to acetal based KrF resists. Post exposure delay (PED) stability of more than 1 hour was achieved.

Paper Details

Date Published: 24 August 2001
PDF: 7 pages
Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); doi: 10.1117/12.436902
Show Author Affiliations
Kwang-Sub Yoon, Samsung Electronics Co., Ltd. (South Korea)
Dong-Won Jung, Samsung Electronics Co., Ltd. (South Korea)
Sook Lee, Samsung Electronics Co., Ltd. (South Korea)
Sung-Ho Lee, Samsung Electronics Co., Ltd. (South Korea)
Sang-Jun Choi, Samsung Electronics Co., Ltd. (South Korea)
Sang-Gyun Woo, Samsung Electronics Co., Ltd. (South Korea)
Joo-Tae Moon, Samsung Electronics Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 4345:
Advances in Resist Technology and Processing XVIII
Francis M. Houlihan, Editor(s)

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