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Proceedings Paper

Ar ion implantation into resist for etching resistance improvement
Author(s): Atsumi Yamaguchi; Akihiro Nakae; Kouichirou Tsujita
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Paper Abstract

Argon (Ar) ion implantation into resist pattern was investigated and the remarkable improvement of the etching resistance was confirmed on various films such as tungsten, aluminum copper, silicon oxide and silicon nitride. The possibility to make resist thickness thinner was proven. Ion dose more than 1E15/cm2 was necessary to obtain a sufficient effect, so that shrinking of resist thickness and pattern width occurred simultaneously. The dependence of pattern shrinking on the line width was observed. Line width uniformity within a wafer was improved because of high etching resistance by ion implantation process. Line edge roughest (LER) or resist pattern was also reduced by ion implantation and smooth etched pattern could be formed. Although same effects were obtained for ArF resist, the shrinkage of ArF resist after ion implantation was more than that of KrF resists. The improvements in etching resistance and critical dimension (CD) control will be discussed in this article.

Paper Details

Date Published: 24 August 2001
PDF: 10 pages
Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); doi: 10.1117/12.436899
Show Author Affiliations
Atsumi Yamaguchi, Mitsubishi Electric Corp. (Japan)
Akihiro Nakae, Mitsubishi Electric Corp. (Japan)
Kouichirou Tsujita, Mitsubishi Electric Corp. (Japan)


Published in SPIE Proceedings Vol. 4345:
Advances in Resist Technology and Processing XVIII
Francis M. Houlihan, Editor(s)

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