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Proceedings Paper

Dependence of resist profile on exposed area ratio
Author(s): Eishi Shiobara; Daisuke Kawamura; Kentaro Matsunaga; Yasunobu Onishi
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Paper Abstract

We investigated resist profile dependence on Exposed Area Ratio (EAR). Using high activation type chemically amplified positive resist, profile changed from T-top to rounded profile with increasing EAR. We thought that this profile change was caused by acid evaporation and re- sticking. To estimate the effect of re-sticking acid, we performed resist sandwich tests. We measured resist thickness loss after PEB and observed resist profile change caused by re-sticking acid. The results thereby obtained suggest the model we propose. To reduce acid evaporation and re-sticking, we tried to use an overcoat layer. The overcoat layer was found to reduce acid evaporation and be useful for reducing resist profile dependence on EAR.

Paper Details

Date Published: 24 August 2001
PDF: 9 pages
Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); doi: 10.1117/12.436896
Show Author Affiliations
Eishi Shiobara, Toshiba Corp. (Japan)
Daisuke Kawamura, Toshiba Corp. (Japan)
Kentaro Matsunaga, Toshiba Corp. (Japan)
Yasunobu Onishi, Toshiba Corp. (Japan)


Published in SPIE Proceedings Vol. 4345:
Advances in Resist Technology and Processing XVIII
Francis M. Houlihan, Editor(s)

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