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Proceedings Paper

Development of DUV resists for zero angle and angled implant applications
Author(s): Patricia Fallon; Michael Francis Cronin; Joseph Lachowski; Pasquale R. Valerio; Larry Bachetti; Jacque H. Georger; Mike Mori; David N. Tomes; Kim Wynja
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Paper Abstract

As the semiconductor industry continues to follow Moore's Law by continually shrinking linewidths, DUV lithographic capacity is increasing. This greater capacity has increased the use of 248nm DUV lithography for all levels particularly applications such as metal and implant layers. Smaller features have required that more advanced implantation techniques be employed. These include greater control of implant depth, gradient, and lateral ion movement. These tighter requirements on the implant process naturally necessitate advanced requirements on the photoresists used in these processes. This paper will discuss the design criteria necessary to develop an advanced DUV resist for a variety of implant layer sand will show resist performance for these applications.

Paper Details

Date Published: 24 August 2001
PDF: 9 pages
Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); doi: 10.1117/12.436893
Show Author Affiliations
Patricia Fallon, Shipley Co. Inc. (United States)
Michael Francis Cronin, Shipley Co. Inc. (United States)
Joseph Lachowski, Shipley Co. Inc. (United States)
Pasquale R. Valerio, Shipley Co. Inc. (United States)
Larry Bachetti, Shipley Co. Inc. (United States)
Jacque H. Georger, Shipley Co. Inc. (United States)
Mike Mori, Shipley Co. Inc. (United States)
David N. Tomes, Shipley Co. Inc. (United States)
Kim Wynja, Shipley Co. Inc. (United States)


Published in SPIE Proceedings Vol. 4345:
Advances in Resist Technology and Processing XVIII
Francis M. Houlihan, Editor(s)

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