Share Email Print

Proceedings Paper

Novel negative photoresist process for 0.18 um dual damascene
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

A great deal of progress has been made in the design of dual damascene process, including via first, trench first, and self-aligned. For overlay, via-first process provides the largest process tolerance to misalignment. However, the positive tone resist face to some difficulties in dual damascene via first approach of photo process, because the 0.18micrometers positive tone trench resist can not be exposed and removed in the 0.20micrometers via hole, observed residues from the SEM cross section profiles after development. In contrast, the negative tone resist show s great advantage in the via first process and producing desired patterns without resist residues in the via hole. In this paper, the design of dual damascene photo process using commercial N702Y (JSR) negative tone resist on DUV43 (Brewer Sc.) Bottom anti reflective coating is evaluated. To improve the depth of focus (DOF) of negative tone resist process, the different resolution enhancement techniques (RET) are investigated fro dense and isolated trench patterns: off-axis illumination (annular ½), attenuated phase shift mask (halftone 6%) with 248nm (NA 0.55) exposure technology, and experimental results regarding to its process performance are presented.

Paper Details

Date Published: 24 August 2001
PDF: 9 pages
Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); doi: 10.1117/12.436891
Show Author Affiliations
Lin-Hung Shiu, Industrial Technology Research Institute (Taiwan)
Chih-Ming Lai, Industrial Technology Research Institute (Taiwan)
Fu-Jye Liang, Industrial Technology Research Institute (Taiwan)
Hung-Chun Chen, Industrial Technology Research Institute (Taiwan)
Li-Jui Chen, Industrial Technology Research Institute (Taiwan)
Shuo-Yen Chou, Industrial Technology Research Institute (Taiwan)

Published in SPIE Proceedings Vol. 4345:
Advances in Resist Technology and Processing XVIII
Francis M. Houlihan, Editor(s)

© SPIE. Terms of Use
Back to Top