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Proceedings Paper

Understanding nonlinear dissolution rates in photoresists
Author(s): Sean D. Burns; Allen B. Gardiner; Val J. Krukonis; Paula M. Wetmore; Jodie Lutkenhaus; Gerard M. Schmid; Lewis W. Flanagin; C. Grant Willson
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Paper Abstract

This work focuses on understanding the dissolution phenomenon of surface inhibition, which is observed often in the development of novolac based resists. Many theories have been offered to explain this phenomenon, including a concentration gradient of resist components, oxidation of the surface, formation of a gel layer, and surface roughness effects. This work focuses on theories that propose a concentration gradient in resist components. A technique has been established to separate and analyze individual layers of thin films, and the concentration gradient in many resist components (residual solvent, low molecular weight chains, photoactive compound, density) has been compared to the observed dissolution rate. The results indicate that no significant concentration gradients exist in a 1mm novolac film, and that these hypotheses are inadequate to explain surface inhibition. Several other theories are explored, including oxidation of the surface, surface roughness effects, etc. The critical ionization dissolution model may offer an explanation for why surface inhibition is observed in novolac, but typically not in poly(p-hydroxystyrene).

Paper Details

Date Published: 24 August 2001
PDF: 13 pages
Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); doi: 10.1117/12.436876
Show Author Affiliations
Sean D. Burns, Univ. of Texas at Austin (United States)
Allen B. Gardiner, Intel Corp. (United States)
Val J. Krukonis, Phasex Corp. (United States)
Paula M. Wetmore, Phasex Corp. (United States)
Jodie Lutkenhaus, Univ. of Texas at Austin (United States)
Gerard M. Schmid, Univ. of Texas at Austin (United States)
Lewis W. Flanagin, Texas Instruments Inc. (United States)
C. Grant Willson, Univ. of Texas at Austin (United States)


Published in SPIE Proceedings Vol. 4345:
Advances in Resist Technology and Processing XVIII
Francis M. Houlihan, Editor(s)

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