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Proceedings Paper

157-nm imaging using thick single-layer resists
Author(s): Michael K. Crawford; Andrew E. Feiring; Jerald Feldman; Roger H. French; Viacheslav A. Petrov; Frank L. Schadt; Robert J. Smalley; Fredrick C. Zumsteg
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Paper Abstract

During the past year the probability that 157 nm lithography will precede next generation lithographies such as EUV or EPL has increased, partly due to encouraging advances in the design of polymeric materials, which have sufficient transparency at 157 nm to serve as platforms for single layer photoresists. We have identified several fluorinated resins which can be developed in aqueous 0.26 N TMAH, have reasonable etch resistances (comparable to poly-parahydroxystyrene), and can be formulated to yield photoresists with optical absorbancies at 157 nm which are low enough to be used at thicknesses of 150-200 nm. We have imaged a number of these formulated resists at 157 nm with the Exitech microstepper at International Sematech, and the results for formulated resists with optical absorption coefficients (base 10) as low as 2.1 per micron are described.

Paper Details

Date Published: 24 August 2001
PDF: 11 pages
Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); doi: 10.1117/12.436874
Show Author Affiliations
Michael K. Crawford, E.I. du Pont de Nemours & Co., Inc. (United States)
Andrew E. Feiring, E.I. du Pont de Nemours & Co., Inc. (United States)
Jerald Feldman, E.I. du Pont de Nemours & Co., Inc. (United States)
Roger H. French, E.I. du Pont de Nemours & Co., Inc. (United States)
Viacheslav A. Petrov, E.I. du Pont de Nemours & Co., Inc. (United States)
Frank L. Schadt, E.I. du Pont de Nemours & Co., Inc. (United States)
Robert J. Smalley, E.I. du Pont de Nemours & Co., Inc. (United States)
Fredrick C. Zumsteg, E.I. du Pont de Nemours & Co., Inc. (United States)


Published in SPIE Proceedings Vol. 4345:
Advances in Resist Technology and Processing XVIII
Francis M. Houlihan, Editor(s)

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