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Proceedings Paper

Characterization of new aromatic polymers for 157-nm photoresist applications
Author(s): Nicolette Fender; Phillip J. Brock; W. Chau; S. Bangsaruntip; Arpan P. Mahorowala; Gregory M. Wallraff; William D. Hinsberg; Carl E. Larson; Hiroshi Ito; Gregory Breyta; Kikue Burnham; Hoa D. Truong; P. Lawson; Robert D. Allen
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Paper Abstract

There is currently tremendous interest in developing 157nm photoresists for imaging applications at 100nm and below. Due to the high VUV absorbance of the polymers used in 248 and 193 photoresists new materials are being investigated for applications at 157nm. In this report the characterization of a number of partially fluorinated polymers based on aromatic backbones will be described. Data on the absorbance, dissolution properties, solvent retention and acid diffusion characteristics of these systems will be presented.

Paper Details

Date Published: 24 August 2001
PDF: 11 pages
Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); doi: 10.1117/12.436873
Show Author Affiliations
Nicolette Fender, IBM Almaden Research Ctr. (United States)
Phillip J. Brock, IBM Almaden Research Ctr. (United States)
W. Chau, IBM Almaden Research Ctr. (United States)
S. Bangsaruntip, IBM Almaden Research Ctr. (United States)
Arpan P. Mahorowala, IBM Almaden Research Ctr. (United States)
Gregory M. Wallraff, IBM Almaden Research Ctr. (United States)
William D. Hinsberg, IBM Almaden Research Ctr. (United States)
Carl E. Larson, IBM Almaden Research Ctr. (United States)
Hiroshi Ito, IBM Almaden Research Ctr. (United States)
Gregory Breyta, IBM Almaden Research Ctr. (United States)
Kikue Burnham, IBM Almaden Research Ctr. (United States)
Hoa D. Truong, IBM Almaden Research Ctr. (United States)
P. Lawson, IBM Almaden Research Ctr. (United States)
Robert D. Allen, IBM Almaden Research Ctr. (United States)


Published in SPIE Proceedings Vol. 4345:
Advances in Resist Technology and Processing XVIII
Francis M. Houlihan, Editor(s)

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