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Proceedings Paper

Resist materials for 157-nm microlithography: an update
Author(s): Raymond Jui-Pu Hung; Hoang Vi Tran; Brian C. Trinque; Takashi Chiba; Shintaro Yamada; Daniel Sanders; Eric F Connor; Robert H. Grubbs; John M. Klopp; Jean M. J. Frechet; Brian H. Thomas; Gregory John Shafer; Darryl D DesMarteau; Will Conley; C. Grant Willson
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Paper Abstract

Fluorocarbon polymers and siloxane-based polymers have been identified as promising resist candidates for 157 nm material design because of their relatively high transparency at this wavelength. This paper reports our recent progress toward developing 157 nm resist materials based on the first of these two polymer systems. In addition to the 2-hydroxyhexafluoropropyl group, (alpha) -trifluoromethyl carboxylic acids have been identified as surprisingly transparent acidic functional groups. Polymers based on these groups have been prepared and preliminary imaging studies at 157 nm are described. 2-Trifluoromethyl-bicyclo[2,2,1] heptane-2-carboxylic acid methyl ester derived from methyl 2-(trifluoromethyl)acrylate was also prepared and gas-phase VUV measurements showed substantially improved transparency over norbornane. This appears to be a general characteristic of norbornane-bearing geminal electron-withdrawing substituents on the 2 carbon bridge. Unfortunately, neither the NiII nor PdII catalysts polymerize these transparent norbornene monomers by vinyl addition. However, several new approaches to incorporating these transparent monomers into functional polymers have been investigated. The first involved the synthesis of tricyclononene (TCN) monomers that move the bulky electron withdrawing groups further away from the site of addition. The hydrogenated geminally substituted TCN monomer still has far better transparency at 157 nm than norbornane. The second approach involved copolymerizing the norbornene monomers with carbon monoxide. The third approach involved free-radical polymerization of norbornene monomers with tetrafluoroethylene and/or other electron-deficient comonomers. All these approaches provided new materials with encouraging absorbance at 157 nm. The lithographic performance of some of these polymers is discussed.

Paper Details

Date Published: 24 August 2001
PDF: 11 pages
Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); doi: 10.1117/12.436870
Show Author Affiliations
Raymond Jui-Pu Hung, Univ. of Texas at Austin (United States)
Hoang Vi Tran, Univ. of Texas at Austin (United States)
Brian C. Trinque, Univ. of Texas at Austin (United States)
Takashi Chiba, Univ. of Texas at Austin (United States)
Shintaro Yamada, Univ. of Texas at Austin (United States)
Daniel Sanders, California Institute of Technology (United States)
Eric F Connor, California Institute of Technology (United States)
Robert H. Grubbs, California Institute of Technology (United States)
John M. Klopp, Univ. of California/Berkeley (United States)
Jean M. J. Frechet, Univ. of California/Berkeley (United States)
Brian H. Thomas, Clemson Univ. (United States)
Gregory John Shafer, Clemson Univ. (United States)
Darryl D DesMarteau, Clemson Univ. (United States)
Will Conley, Motorola and SEMATECH (United States)
C. Grant Willson, Univ. of Texas at Austin (United States)


Published in SPIE Proceedings Vol. 4345:
Advances in Resist Technology and Processing XVIII
Francis M. Houlihan, Editor(s)

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