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Proceedings Paper

Effect of fluorinated monomer unit introduction to KrF resin system in F2 lithography
Author(s): Yasunori Uetani; Kazuhiko Hashimoto; Yoshiko Miya; Isao Yoshida; Mikio Takigawa; Ryotaro Hanawa
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Paper Abstract

We reported the novel copolymer system containing fluorine atom with hydroxystyrene (HST) and 3-(perfluoro-3- methylbutyl)-2-hydroxypropyl methacrylate (MBHPMA). Using the copolymer, melamine crosslinker and PAG, negative resist was formulated. Transmittance of the resist film was 35% at 0.1micrometers thickness. High contrast negative pattern was obtained by F2 excimer laser exposure. Dry-etching resistance of the resist was comparative to novolak type i- line resist.

Paper Details

Date Published: 24 August 2001
PDF: 6 pages
Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); doi: 10.1117/12.436869
Show Author Affiliations
Yasunori Uetani, Sumitomo Chemical Co., Ltd. (Japan)
Kazuhiko Hashimoto, Sumitomo Chemical Co., Ltd. (Japan)
Yoshiko Miya, Sumitomo Chemical Co., Ltd. (Japan)
Isao Yoshida, Sumitomo Chemical Co., Ltd. (Japan)
Mikio Takigawa, Sumitomo Chemical Co., Ltd. (Japan)
Ryotaro Hanawa, Sumitomo Chemical Co., Ltd (Japan)


Published in SPIE Proceedings Vol. 4345:
Advances in Resist Technology and Processing XVIII
Francis M. Houlihan, Editor(s)

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