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Proceedings Paper

Resist materials for 157-nm lithography
Author(s): Minoru Toriumi; Seiichi Ishikawa; Seiro Miyoshi; Takuya Naito; Tamio Yamazaki; Manabu Watanabe; Toshiro Itani
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Paper Abstract

Fluoropolymers are key materials for single layer resists of 157nm lithography. We have been studying fluoropolymers to identify their potential for base resins of 157nm photoresist. Many fluoropolymers showed high optical transparencies, with absorption coefficients of 0.01micrometers -1 to 2micrometers -1 at 157nm, and dry- etching resistance comparable to an ArF resist, and non- swelling solubility in the standard developer. Positive- tone resists were formulated using fluoropolymers that fulfill practical resist requirements. They showed good sensitivities, from 1 mJ/cm(superscript 2 to 10 mJ/cm2, and contrast in the sensitivity curves. They were able to be patterned using a F2 laser microstepper.

Paper Details

Date Published: 24 August 2001
PDF: 8 pages
Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); doi: 10.1117/12.436868
Show Author Affiliations
Minoru Toriumi, Semiconductor Leading Edge Technologies, Inc. (Japan)
Seiichi Ishikawa, Semiconductor Leading Edge Technologies, Inc. (Japan)
Seiro Miyoshi, Semiconductor Leading Edge Technologies, Inc. (Japan)
Takuya Naito, Semiconductor Leading Edge Technologies, Inc. (Japan)
Tamio Yamazaki, Semiconductor Leading Edge Technologies, Inc. (Japan)
Manabu Watanabe, Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshiro Itani, Semiconductor Leading Edge Technologies, Inc. (Japan)


Published in SPIE Proceedings Vol. 4345:
Advances in Resist Technology and Processing XVIII
Francis M. Houlihan, Editor(s)

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