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Proceedings Paper

Application of top surface imaging process to 157-nm lithography
Author(s): Isao Satou; Manabu Watanabe; Hiroyuki Watanabe; Toshiro Itani
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Paper Abstract

A top surface imaging (TSI) process with a very thin imaging resist is one of the approaches for 100-nm or smaller pattern fabrication. We have been evaluating the different types of bilayer silylation processes for 193nm lithography, such as the bilayer silylation process without applying any wet-development and an improved bilayer silylation process that applies the vapor phase silylation treatment after alkaline wet-development of the top layer (SILYAL). We have been trying to apply these TSI processes to 157nm lithography and could successfully fabricate sub-100-nm fine resist patterns with high aspect ratios. We confirmed the lithographic high performance of these bilayer silylation processes and 157-nm lithography. In this paper, we describe the current status and progress in these silylation processes for 157nm lithography.

Paper Details

Date Published: 24 August 2001
PDF: 10 pages
Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); doi: 10.1117/12.436867
Show Author Affiliations
Isao Satou, Semiconductor Leading Edge Technologies, Inc. (Japan)
Manabu Watanabe, Semiconductor Leading Edge Technologies, Inc. (Japan)
Hiroyuki Watanabe, Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshiro Itani, Semiconductor Leading Edge Technologies, Inc. (Japan)


Published in SPIE Proceedings Vol. 4345:
Advances in Resist Technology and Processing XVIII
Francis M. Houlihan, Editor(s)

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