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Proceedings Paper

Silicon-containing resists for 157-nm applications
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Paper Abstract

We have designed and developed an aqueous base soluble polymer system with a silsequioxane (SSQ) backbone for 157nm bilayer resist applications. These base resins have absorbances as low as 0.6micrometers -1 at 157nm. The imagable polymers which contain acid-labile ester functionalities have absorbances between 2.0 and 3.0micrometers -1. The silicon content of these polymers is around 15% by weight. Therefore, our polymers can be utilized in 157nm positive bilayer resist applications with a film thickness of around 150nm. We have evaluated several resist formulations based on these polymers. These resist formulations have shown high contrast and excellent resolution.

Paper Details

Date Published: 24 August 2001
PDF: 8 pages
Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); doi: 10.1117/12.436861
Show Author Affiliations
Ratnam Sooriyakumaran, IBM Almaden Research Ctr. (United States)
Debra Fenzel-Alexander, IBM Almaden Research Ctr. (United States)
Nicolette Fender, IBM Almaden Research Ctr. (United States)
Gregory M. Wallraff, IBM Almaden Research Ctr. (United States)
Robert D. Allen, IBM Almaden Research Ctr. (United States)


Published in SPIE Proceedings Vol. 4345:
Advances in Resist Technology and Processing XVIII
Francis M. Houlihan, Editor(s)

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