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Proceedings Paper

Resist composition effects on ultimate resolution of negative-tone chemically amplified resists
Author(s): Laurent Pain; C. Gourgon; K. Patterson; B. Scarfogliere; Serge V. Tedesco; Gilles L. Fanget; B. Dal'zotto; M. Ribeiro; Tadashi Kusumoto; Masumi Suetsugu; Ryotaro Hanawa
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Paper Abstract

Chemical Amplification Resists (CAR) are now widely used in optical lithography since the introduction of the deep UV era. One advantage of the CARs is also their full compatibility with electron beam writing. This paper is focused on the development work of a negative tone resist. The influence of resist compounds such as polymer matrix composition and PAG size on diffusion and ultimate resolution is detailed. Finally the pattern transfer capabilities of a 30 nm isolated line into a polysilicon layer is presented.

Paper Details

Date Published: 24 August 2001
PDF: 10 pages
Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); doi: 10.1117/12.436854
Show Author Affiliations
Laurent Pain, CEA-LETI (France)
C. Gourgon, CNRS (France)
K. Patterson, CEA-LETI (France)
B. Scarfogliere, CEA-LETI (France)
Serge V. Tedesco, CEA-LETI (France)
Gilles L. Fanget, CEA-LETI (France)
B. Dal'zotto, CEA-LETI (France)
M. Ribeiro, Lab. de Thermodynamique des Solutions et des Polymeres (France)
Tadashi Kusumoto, Sumitomo Chemical Co., Ltd. (Japan)
Masumi Suetsugu, Sumitomo Chemical Co., Ltd. (Japan)
Ryotaro Hanawa, Sumitomo Chemical Co., Ltd (Japan)


Published in SPIE Proceedings Vol. 4345:
Advances in Resist Technology and Processing XVIII
Francis M. Houlihan, Editor(s)

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