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Proceedings Paper

Novel routes toward sub-70-nm contact windows by using new KrF photoresist
Author(s): Jin-Soo Kim; Cha-Won Koh; Geunsu Lee; Jae Chang Jung; Ki-Soo Shin
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Paper Abstract

To overcome C/H(contact holes) shrinkage limitation of Resist Flow Process (RFP), we investigated and analyzed the tendency of the shrink bias according to the baking temperature and other process factors. Based on this basic test, we found that the shrink bias for the baking temperature could be modeled on the simple linear function. And also we estimated new Hotplate to improve CD uniformity after the resist flow and evaluated newly developed photoresist (New Resist) for the stable C/H shrinkage. In this study, we could recognize that CD uniformity after the resist flow was very dependent on actual temperature uniformity of Hotplate. Actually New Hotplate, which was superior to normal Hotplate, showed good CD uniformity (16nm) at the strong brink bias(140nm). On the other hand, the C/H shrinkage of New Resist was more stable than those of normal KrF Resists and its C/H profiles could not be severely deformed at even high baking temperature to shrink Sub-70nm C/H from original C/H(200nm). Based on these results, the progressive Resist Flow Process in KrF lithography will be a very robust candidate at even high gigabit generation devices.

Paper Details

Date Published: 24 August 2001
PDF: 9 pages
Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); doi: 10.1117/12.436852
Show Author Affiliations
Jin-Soo Kim, Hyundai Electronics Industries Co., Ltd. (South Korea)
Cha-Won Koh, Hyundai Electronics Industries Co., Ltd. (South Korea)
Geunsu Lee, Hyundai Electronics Industries Co., Ltd. (South Korea)
Jae Chang Jung, Hyundai Electronics Industries Co., Ltd. (South Korea)
Ki-Soo Shin, Hyundai Electronics Industries Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 4345:
Advances in Resist Technology and Processing XVIII
Francis M. Houlihan, Editor(s)

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