Share Email Print

Proceedings Paper

Development of resists for thermal flow process applicable to mass production
Author(s): Yool Kang; Sang-Gyun Woo; Sang-Jun Choi; Joo-Tae Moon
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

There are several methods to form small contact holes which are made by optically optimized conditions including PSM, OAI, high NA system. Those methods were very difficult to print sub-130nm contact holes. To print sub-130nm contact holes, we have developed new photoresists for thermal flow process. They could be classified into crosslinking and non-crosslinking system according to whether it could be crosslinked or not during the baking steps. The crosslinking system was consisted of conventional polyhydroxy styrene-based polymers with an additive for cross-linking reactions and the non-crosslinking system was designed by optimized formulation conditions such as molecular weights (Mw), protecting ratio, the amount of photo acid generators and additives. As a result, we obtained 0.13um resolution with 0.6 um DOF by thermal flow process and effectively controlled the flow rate, 10~15nm/ degree(s)C. Also we achieved vertical 90nm contact holes without any pattern deformation.

Paper Details

Date Published: 24 August 2001
PDF: 10 pages
Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); doi: 10.1117/12.436851
Show Author Affiliations
Yool Kang, Samsung Electronics Co., Ltd. (South Korea)
Sang-Gyun Woo, Samsung Electronics Co., Ltd. (South Korea)
Sang-Jun Choi, Samsung Electronics Co., Ltd. (South Korea)
Joo-Tae Moon, Samsung Electronics Co., Ltd. (South Korea)

Published in SPIE Proceedings Vol. 4345:
Advances in Resist Technology and Processing XVIII
Francis M. Houlihan, Editor(s)

© SPIE. Terms of Use
Back to Top