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Proceedings Paper

Investigation on the mechanism of the 193-nm resist linewidth reduction during the SEM measurement
Author(s): ChungHsi J. Wu; Wu-Song Huang; K. Rex Chen; Charles N. Archie; Mark E. Lagus
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Paper Abstract

Linewidth reduction (or line slimming) of resist features has been previously observed during routine scanning electron microscopy (SEM). The impact of the linewidth reduction may result in measurement precision and accuracy errors and potential device reliability issues due to permanent feature deformation. The magnitude and the origin of these effects for various resist platforms are not well understood. In this study the measurement of the extent of slimming is performed on two 193nm single layer resist (SLR) platforms, including an acrylate based SLR and a polynorborene (poly-CO) based SLR. The maximum shrinkage is found to be approximately 15% and varies as a function of resist composition and electron beam landing energy and flux. Mechanisms for the resist shrinkage that impact both the physical (e.g., annealing or solvent loss) and chemical (e.g., bond scission, cross-linking, fragmentation, or deprotection) properties are evaluated. Potential methods for reducing the slimming effect are proposed in this paper.

Paper Details

Date Published: 24 August 2001
PDF: 10 pages
Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); doi: 10.1117/12.436848
Show Author Affiliations
ChungHsi J. Wu, IBM Semiconductor Research and Development Ctr. (United States)
Wu-Song Huang, IBM Semiconductor Research and Development Ctr. (United States)
K. Rex Chen, IBM Semiconductor Research and Development Ctr. (United States)
Charles N. Archie, IBM Semiconductor Research and Development Ctr. (United States)
Mark E. Lagus, IBM Semiconductor Research and Development Ctr. (United States)


Published in SPIE Proceedings Vol. 4345:
Advances in Resist Technology and Processing XVIII
Francis M. Houlihan, Editor(s)

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