Share Email Print

Proceedings Paper

Mechanistic understanding of line-end shortening
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

In recent years the line end shortening (LES) phenomena, known also as line end pullback, has emerged as a significant issue in microlithography. The causes of LES include aerial image formation, simple pattern geometry considerations, and diffusion effects. This paper presents an overview of the main causes of LES with particular attention to contributions due to exposure gradients at the feature edge. The effect of exposure gradients on acid diffusion is described and results of experiments designed to study gradient effects are presented along with simulation of diffusion contributions to LES. Simulation and experiment suggest that transport-related resist bias mechanisms affect LES in complex ways. In addition to diffusion simulations, aerial image calculations are presented as simple demonstration of the contribution of the imaging system to LES.

Paper Details

Date Published: 24 August 2001
PDF: 9 pages
Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); doi: 10.1117/12.436844
Show Author Affiliations
Michael D. Stewart, Univ. of Texas at Austin (United States)
Gerard M. Schmid, Univ. of Texas at Austin (United States)
Sergei V. Postnikov, Univ. of Texas at Austin (United States)
C. Grant Willson, Univ. of Texas at Austin (United States)

Published in SPIE Proceedings Vol. 4345:
Advances in Resist Technology and Processing XVIII
Francis M. Houlihan, Editor(s)

© SPIE. Terms of Use
Back to Top