Share Email Print

Proceedings Paper

Improved lithographic performance for resists based on polymers having a vinyl ether-maleic anhydride (VEMA) backbone
Author(s): Hyun-Woo Kim; Sang-Jun Choi; Dong-Won Jung; Sook Lee; Sung-Ho Lee; Yool Kang; Sang-Gyun Woo; Joo-Tae Moon; Robert J. Kavanagh; George G. Barclay; George W. Orsula; Joe Mattia; Stefan Caporale; Timothy G. Adams; Tsutomu Tanaka; Doris Kang
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

ArF lithography, in combination with chemically amplified resists, has been investigated as one of the most promising technologies for producing patterns below 100 nm. In considering the polymer matrix for 193 nm photoresist applications, factors such as sensitivity, transparency to 193 nm radiation, adhesion to substrate, dry etch resistance, ease of synthesis, and availability of monomers are very critical. In these respects, remarkable progress has been made in development of ArF resist material. Polymers of acrylic and methacrylic esters show good imaging performance at 193 nm, but have insufficient dry-etch resistance under oxide or nitride etch condition. On the other hand, cyclic olefin-maleic anhydride (COMA) alternating copolymers exhibit good dry etch resistance, but have poor resolution capability. We previously reported a new platform, based on a vinyl ether-maleic anhydride (VEMA) alternating polymer system, that demonstrated both good resolution and high dry etch resistance. In this paper, VEMA systems with improved lithographic performance are presented. The new platform (VEMA) showed good performance in resolution, depth of focus (DOF), iso-dense bias, and post-etch roughness. With conventional illumination (NA=0.6, sigma=0.7), 120 nm dense line/space patterns with 0.4 (mu) M DOF were resolved. And 90 nm L/S patterns 0.6 (mu) M DOF were resolved with off-axis illumination (NA=0.63). Another important factor to be considered for the dry-etch process is post-etch roughness. In the case of VEMA system a clean surface was observed after etch under oxide, nitride, and poly conditions. The VEMA resist system is regarded as one of the most production-worthy material for real device manufacture.

Paper Details

Date Published: 24 August 2001
PDF: 12 pages
Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); doi: 10.1117/12.436840
Show Author Affiliations
Hyun-Woo Kim, Samsung Electronics Co., Ltd. (South Korea)
Sang-Jun Choi, Samsung Electronics Co., Ltd. (South Korea)
Dong-Won Jung, Samsung Electronics Co., Ltd. (South Korea)
Sook Lee, Samsung Electronics Co., Ltd. (South Korea)
Sung-Ho Lee, Samsung Electronics Co., Ltd. (South Korea)
Yool Kang, Samsung Electronics Co., Ltd. (South Korea)
Sang-Gyun Woo, Samsung Electronics Co., Ltd. (South Korea)
Joo-Tae Moon, Samsung Electronics Co., Ltd. (South Korea)
Robert J. Kavanagh, Shipley Co. Inc. (United States)
George G. Barclay, Shipley Co. Inc. (United States)
George W. Orsula, Shipley Co. Inc. (United States)
Joe Mattia, Shipley Co. Inc. (United States)
Stefan Caporale, Shipley Co. Inc. (United States)
Timothy G. Adams, Shipley Co. Inc. (United States)
Tsutomu Tanaka, Shipley Co. Inc. (United States)
Doris Kang, Shipley Co. Inc. (United States)

Published in SPIE Proceedings Vol. 4345:
Advances in Resist Technology and Processing XVIII
Francis M. Houlihan, Editor(s)

© SPIE. Terms of Use
Back to Top