Share Email Print

Proceedings Paper

Line-edge roughness in positive-tone chemically amplified resists: effect of additives and processing conditions
Author(s): Qinghuang Lin; Dario L. Goldfarb; Marie Angelopoulos; Suresh R Sriram; Jeffrey S. Moore
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Nanometer scale line edge roughness (LER) is an increasingly important factor in critical dimension control as the minimum feature sizes of devices continue to shrink. We previously studied the material origin of the resist LER in silicon containing positive-tone chemically amplified resists by emulating the resist compositions ana analyzing morphology in the line edge region with atomic force microscopy (AFM). We concluded that the LER stems mainly from the phase incompatibility of the protected and de- protected polymers. In this paper, we expand our study to also include the non-silicon containing chemically amplified resists. We present results on the effects of casting solvent, photoacid generator, and base additive on the surface roughness of thin films of neat partially protected polymers and blends of the protected and the de-protected polymers. We also investigated the surface roughness of neat partially protected polymer films under various development conditions. The AFM results reinforce our previous conclusion on the material origin of LER in chemically amplified resists. Strategies to minimize LER will also be discussed.

Paper Details

Date Published: 24 August 2001
PDF: 9 pages
Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); doi: 10.1117/12.436836
Show Author Affiliations
Qinghuang Lin, IBM Thomas J. Watson Research Ctr. (United States)
Dario L. Goldfarb, IBM Thomas J. Watson Research Ctr. (United States)
Marie Angelopoulos, IBM Thomas J. Watson Research Ctr. (United States)
Suresh R Sriram, Univ. of Illinois/Urbana-Champaign (United States)
Jeffrey S. Moore, Univ. of Illinois/Urbana-Champaign (United States)

Published in SPIE Proceedings Vol. 4345:
Advances in Resist Technology and Processing XVIII
Francis M. Houlihan, Editor(s)

© SPIE. Terms of Use
Back to Top