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Proceedings Paper

All Co2-processed 157-nm fluoropolymer-containing photoresist systems
Author(s): Christopher L. McAdams; Devin Flowers; Erik N. Hoggan; Ruben G. Carbonell; Joseph M. DeSimone
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Paper Abstract

We present our progress on implementing a completely carbon dioxide-processed 157nm photoresist system. While current processes rely on the use of large amounts or organic and aqueous solvents, our chemistry and equipment will allow both negative and positive-tone imaging using CO2 as a casting solvent, developer, and stripping solvent. The unique solubility characteristics of fluoropolymers in CO2 make it possible to use this cleaner and simpler approach with improved optical transparency at 157nm and excellent etch resistance. Also, the inherently low surface tension and viscosity and excellent wetting properties of liquid CO2 will allow us to generate defect-free thin films on large area wafers (300mm and larger). In addition, CO2-based development can virtually eliminate image collapse problems associated with aqueous-base development. Aside form performance issues, our process eliminates several waste streams from the semiconductor manufacturing process and replaces them with the more environmentally benign CO2-this reduction in complexity could allow the integration of multiple processes and provide an enormous savings to the industry.

Paper Details

Date Published: 24 August 2001
PDF: 8 pages
Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); doi: 10.1117/12.436835
Show Author Affiliations
Christopher L. McAdams, Univ. of North Carolina/Chapel Hill and Micell Integrates Systems (United States)
Devin Flowers, Univ. of North Carolina/Chapel Hill (United States)
Erik N. Hoggan, North Carolina State Univ. (United States)
Ruben G. Carbonell, Micell Integrated Systems and North Carolina State Univ. (United States)
Joseph M. DeSimone, Univ. of North Carolina/Chapel Hill, Micell Integrated Systems, and North Carolina State (United States)

Published in SPIE Proceedings Vol. 4345:
Advances in Resist Technology and Processing XVIII
Francis M. Houlihan, Editor(s)

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