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Proceedings Paper

Interlayer dielectric process for LSI circuits using positive photosensitive polyimide synthesized by block-copolymerization
Author(s): Masahiro Aoyagi; Shigemasa Segawa; EunSil Jung; Taro Itatani; Masanori Komuro; Tsuenenori Sakamoto; Hiroshi Itatani; Masataka Miyamura; Shunichi Matsumoto
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Paper Abstract

Photosensitive polyimide is expected as a future interlayer dielectric material in LSI circuits. In this paper, we propose a new interlayer dielectric process using a positive photosensitive polyimide directly synthesized from aromatic dianhydride and aliphatic diamine by block-copolymerization. Photosensitive polyimide solution was prepared with N-methyl-2-pyrrolidone (NMP) solvent. A diazonaphthoquinone PC-5 was used as a photosensitizer. The thin film was spin-coated with changing polyimide concentration and rotation speed. The uniformity of the coated film was achieved less than +/- 0.9 % on a 3-inch wafer of silicon. A 0.5 micrometers line and space pattern was obtained by i-line lithography. The (gamma) value of the contrast was evaluated to 1.05. The dielectric constant of the base polyimide was measured for a thick film by the cavity perturbation method. The values from 2.4 to 3.0 were obtained within the frequency range from 1 GHz to 20 GHz. The break down voltage was measured to be 107 kV/mm without high-temperature heat treatment.

Paper Details

Date Published: 24 August 2001
PDF: 6 pages
Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); doi: 10.1117/12.436832
Show Author Affiliations
Masahiro Aoyagi, Electrotechnical Lab. (Japan)
Shigemasa Segawa, PI R&D Co. (Japan)
EunSil Jung, PI R&D Co. (Japan)
Taro Itatani, Electrotechnical Lab. (Japan)
Masanori Komuro, Electrotechnical Lab. (Japan)
Tsuenenori Sakamoto, Electrotechnical Lab. (Japan)
Hiroshi Itatani, PI R&D Co. (Japan)
Masataka Miyamura, PI R&D Co. (Japan)
Shunichi Matsumoto, PI R&D Co. (Japan)


Published in SPIE Proceedings Vol. 4345:
Advances in Resist Technology and Processing XVIII
Francis M. Houlihan, Editor(s)

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