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Proceedings Paper

Modeling the impact of thermal history during post-exposure bake on the lithographic performance of chemically amplified resists
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Paper Abstract

In this study, the influence of the thermal history during post exposure bake (PEB) on the lithographic performance of a chemically amplified resist is examined using a reaction-diffusion model of the resist combined with an arbitrary time-temperature profile. The temperature profiles investigated in this study are either based on a simple heat transfer model or arbitrary time-temperature data. The heat transfer model allows variation of the rise time to the bake temperature, of the cooling process during transfer to the chill plate, and of the fall time to the chill plate temperature. Calculations of the dose-to-size for dense features and the iso-dense bias are presented for typical temperature profiles, and these results are contrasted with the lithographic responses for an ideal bake. Also, the lithographic response for a double bake is presented. For certain resist model parameters, the lithographic response for a higher temperature bake followed by a lower temperature bake can be significantly different from the response when the lower temperature bake precedes the higher temperature bake.

Paper Details

Date Published: 24 August 2001
PDF: 9 pages
Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); doi: 10.1117/12.436826
Show Author Affiliations
Mark D. Smith, KLA-Tencor Corp. (United States)
Chris A. Mack, KLA-Tencor Corp. (United States)
John S. Petersen, Petersen Advanced Lithography, Inc. (United States)


Published in SPIE Proceedings Vol. 4345:
Advances in Resist Technology and Processing XVIII
Francis M. Houlihan, Editor(s)

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