Share Email Print
cover

Proceedings Paper

Photoemission under three-photon excitation in a NEA GaAs photocathode
Author(s): Liming Wang; Xun Hou; Zhao Cheng
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

This paper reports the measurement of electron emission due to 2.06 micrometers Q-switched laser excitation on Cs, O2 activated GaAs photocathodes with different sensitivity. The cubic dependence on fluence is consistent with three-photon excitation across the bandgap of GaAs semiconductor. The same cubic response in photoelectron emission at liquid nitrogen temperature (77K) demonstrates that the electron emission is three-photon photoemission and thermal emission is negligible. The characteristics of multiphoton photoemission is strongly determined by the sensitivity of photocathode. A formula based on three-order perturbation theory accounts quantitatively for the authors' observation.

Paper Details

Date Published: 1 May 1991
PDF: 7 pages
Proc. SPIE 1415, Modeling and Simulation of Laser Systems II, (1 May 1991); doi: 10.1117/12.43682
Show Author Affiliations
Liming Wang, Xian Institute of Optics and Precision Mechanics (China)
Xun Hou, Xian Institute of Optics and Precision Mechanics (China)
Zhao Cheng, Xian Institute of Optics and Precision Mechanics (China)


Published in SPIE Proceedings Vol. 1415:
Modeling and Simulation of Laser Systems II
Alvin D. Schnurr, Editor(s)

© SPIE. Terms of Use
Back to Top