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Proceedings Paper

193-nm single-layer resists based on advanced materials
Author(s): Naomi Shida; Tohru Ushirogouchi; Koji Asakawa; Yoshinori Funaki; Akira Takaragi; Kiyoharu Tsutsumi; Keizo Inoue; Tatsuya Nakano
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Paper Abstract

Recent advances in the 193-nm single-layer resist for forming finer patterns have led us to search for new resist materials for the ArF excimer laser. We describe novel, mass productive single layer resist based on hybrid hyper lactonic polymer which has high resolution, good hydrophilicity, and dry etch resistance. Further, we investigate the lactonic polymer, which has Mass-productive Ultimate Norbornyl group with Outstanding Solubility (MUNGOS).

Paper Details

Date Published: 24 August 2001
PDF: 7 pages
Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); doi: 10.1117/12.436817
Show Author Affiliations
Naomi Shida, Toshiba Corp. (Japan)
Tohru Ushirogouchi, Toshiba Corp. (Japan)
Koji Asakawa, Toshiba Corp. (Japan)
Yoshinori Funaki, Daicel Chemical Industries, Ltd. (Japan)
Akira Takaragi, Daicel Chemical Industries, Ltd. (Japan)
Kiyoharu Tsutsumi, Daicel Chemical Industries, Ltd. (Japan)
Keizo Inoue, Daicel Chemical Industries, Ltd. (Japan)
Tatsuya Nakano, Daicel Chemical Industries, Ltd. (Japan)


Published in SPIE Proceedings Vol. 4345:
Advances in Resist Technology and Processing XVIII
Francis M. Houlihan, Editor(s)

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