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Proceedings Paper

Improved notch model for resist dissolution in lithography simulation
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Paper Abstract

The use of experimental development rate information is used to demonstrate various deficiencies in the dissolution rate equations commonly employed in commercial lithography simulation programs. An improved version of the Notch dissolution rate equation, incorporating one new parameter, is proposed, which addresses the observed deficiencies. Simulation work comparing the new equation to the standard Notch model reveals significant differences in process window and exposure margin, yet negligible changes in feature profile and iso-dense bias at best focus and exposure.

Paper Details

Date Published: 24 August 2001
PDF: 9 pages
Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); doi: 10.1117/12.436815
Show Author Affiliations
Stewart A. Robertson, Shipley Co. Inc. (United States)
Edward K. Pavelchek, Shipley Co. Inc. (United States)
Wolfgang Hoppe, Sigma-C GmbH (Germany)
Robert Wildfeuer, Sigma-C GmbH (Germany)

Published in SPIE Proceedings Vol. 4345:
Advances in Resist Technology and Processing XVIII
Francis M. Houlihan, Editor(s)

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