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Proceedings Paper

Photolithographic evaluation of deep UV resist materials for mask-making applications
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Paper Abstract

This paper discusses methods used for photoresist selection and etch processing for laser mask patterning tool characterization. A major requirement of a deep ultraviolet (DUV) resist is that is has a storage capability of more than 90 days. This means the material does not have to be coated on demand to deliver exceptional lithographic performance. Process difficulties in the development and implementation of an advanced DUV maskmaking solution and how they are being addressed is also described. The purpose of this paper is to provide a look at the resist, develop, and etch processes being developed at Etec Systems, Inc. for DUV maskmaking applications. Key topics are etch characterization and resist process optimization at 257nm associated with the migration to DUV from i-line manufacturing environments and turning from wafer to mask patterning applications. The paper also shows results of work being done to assess alternative resist chemistries in an attempt to maintain a precoated mask blank option for mask shop use. The paper points out issues to be considered when moving from diazoquinone (DNQ) chemistry to chemically amplified resists (CAR) processing in a mask manufacturing environment.

Paper Details

Date Published: 24 August 2001
PDF: 7 pages
Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); doi: 10.1117/12.436813
Show Author Affiliations
Warren Montgomery, Etec Systems, Inc. (United States)
Alex H. Buxbaum, Etec Systems, Inc. (United States)
William Rodrigues, Etec Systems, Inc. (United States)
Jeff A. Albelo, Etec Systems, Inc. (United States)
Scott E. Fuller, Etec Systems, Inc. (United States)


Published in SPIE Proceedings Vol. 4345:
Advances in Resist Technology and Processing XVIII
Francis M. Houlihan, Editor(s)

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