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Proceedings Paper

Creation of low-molecular-weight organic resists for nanometer lithography
Author(s): Toshiaki Kadota; Motoko Yoshiiwa; Hiroshi Kageyama; Fujio Wakaya; Kenji Gamo; Yasuhiko Shirota
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Paper Abstract

Several amorphous molecular materials that function as positive or negative electron-beam resists, to which we refer as molecular resists, have been created. They include 1,3,5-tris[4-(4-toluenesulfonyloxy)phenyl]benzene (TsOTPB), 1,3,5-tris[4-(tert-butoxycarbonylmethoxy)phenyl]benzene (BCMTPB), 4,4',4'-tris(allylsuccinimido)triphenylamine (ASITPA), 1,3,5-tris[2-(4-vinylphenylcarbonyloxy)phenyl]benzene (o-VCTPB), 1,3,5-tris[3-(4-vinylphenylcarbonyloxy)phenyl]benzene (m-VCTPB), and 1,3,5-tris[4-(4-vinylphenylcarbonyloxy)phenyl]benzene (p-VCTPB). These molecular resists permitted the fabrication of line patterns with a high resolution from 150 to 70 nm on exposure to an electron beam.

Paper Details

Date Published: 24 August 2001
PDF: 12 pages
Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); doi: 10.1117/12.436812
Show Author Affiliations
Toshiaki Kadota, Osaka Univ. (Japan)
Motoko Yoshiiwa, Osaka Univ. (Japan)
Hiroshi Kageyama, Osaka Univ. (Japan)
Fujio Wakaya, Osaka Univ. (Japan)
Kenji Gamo, Osaka Univ. (Japan)
Yasuhiko Shirota, Osaka Univ. (Japan)


Published in SPIE Proceedings Vol. 4345:
Advances in Resist Technology and Processing XVIII
Francis M. Houlihan, Editor(s)

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