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Proceedings Paper

Wafer-induced reading error in metal sputtering process
Author(s): Dae-Joung Kim; Seok-Hwan Oh; Gisung Yeo; Yong-Guk Bae; Jaehwan Kim; Young-Hee Kim
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Paper Abstract

For higher density devices electric performances have been focused more than the others. In the case of metal sputtering process some of machine makes local asymmetric deposition across the wafer. In this study, a couple of overlay reading errors which comes from asymmetric metal deposition has been studied in terms of photo process. As a result, scaling error could be reduced down to a certain amount with the optimization of overlay reading marks. However it will not be cleared no matter what kinds of mark are used as long as overlay marks are asymmetry. A symmetric sputtering should be the only way to figure out this problem. In order to make total product, related processes have to be concerned as well.

Paper Details

Date Published: 22 August 2001
PDF: 6 pages
Proc. SPIE 4344, Metrology, Inspection, and Process Control for Microlithography XV, (22 August 2001); doi: 10.1117/12.436793
Show Author Affiliations
Dae-Joung Kim, Samsung Electronics Co., Ltd. (South Korea)
Seok-Hwan Oh, Samsung Electronics Co., Ltd. (South Korea)
Gisung Yeo, Samsung Electronics Co., Ltd. (South Korea)
Yong-Guk Bae, Samsung Electronics Co., Ltd. (South Korea)
Jaehwan Kim, Samsung Electronics Co., Ltd. (South Korea)
Young-Hee Kim, Samsung Electronics Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 4344:
Metrology, Inspection, and Process Control for Microlithography XV
Neal T. Sullivan, Editor(s)

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