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Proceedings Paper

CD SEM carry-over effect investigation
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Paper Abstract

In a multiple tools environment the matching and stability performance of CD SEM becomes crucial for successful introduction of new technology generations. However proper evaluation procedure for CD SEM precision components represents a nontrivial issue when total precision budget is 1-2nm (according to the National Technology Roadmap for Semiconductors). Factors such as sample damage; process variation and measurement sample size should be carefully examined. In this article we address carryover - a very well known but not widely studied phenomenon, related to the sample damage, which directly affects the precision evaluation of a CD SEM. We have investigated the carryover in an attempt to reduce the effect of sample degradation due to repeated measurement and improve measurement precision. We present results based on relatively large data set and moderate range of variables. The experimental data show that for modern CD SEM both electron energy and current are very important factors defining the carryover. Although no complete elimination of the carryover effect have been observed under the conditions studied recommendations have been made with respect to acceptable compromise based on the current precision requirements.

Paper Details

Date Published: 22 August 2001
PDF: 5 pages
Proc. SPIE 4344, Metrology, Inspection, and Process Control for Microlithography XV, (22 August 2001); doi: 10.1117/12.436792
Show Author Affiliations
Anna K. Chernakova, Seagate Technology (United States)
Alan J. Fan, KLA-Tencor Corp. (United States)

Published in SPIE Proceedings Vol. 4344:
Metrology, Inspection, and Process Control for Microlithography XV
Neal T. Sullivan, Editor(s)

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