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Proceedings Paper

Electrical linewidth measurement for next-generation lithography
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Paper Abstract

In recent years electrical linewidth measurement (ELM) has become accepted as an efficient method to gather large amounts of linewidth data rapidly and accurately. However, there are offsets between electrical and SEM measurements. While these have not been a concern for large features, it is important to minimize the bias as the actual linewidth approaches the offset. The purpose of this paper is to demonstrate that ELM can be used to measure linewidths much smaller than 100nm. Our experiments show that out-diffusion and surface ion depletion are the primary sources of bias in electrical linewidth measurement. Silicon nitride capping layers before annealing are helpful to prevent out-diffusion.

Paper Details

Date Published: 22 August 2001
PDF: 7 pages
Proc. SPIE 4344, Metrology, Inspection, and Process Control for Microlithography XV, (22 August 2001); doi: 10.1117/12.436789
Show Author Affiliations
Jongwook Kye, Advanced Micro Devices, Inc. (United States)
Harry J. Levinson, Advanced Micro Devices, Inc. (United States)


Published in SPIE Proceedings Vol. 4344:
Metrology, Inspection, and Process Control for Microlithography XV
Neal T. Sullivan, Editor(s)

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