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Proceedings Paper

Secondary-electron image profiles using bias voltage technique in deep contact hole
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Paper Abstract

Charging effects on secondary electron (SE) profiles with bias voltage in deep contact holes are investigated. We show first in detail the SE beam profiles for operating conditions such as scanning time, current and landing energy, the brightness of the bottom of the contact hole depends on the charge of SE yield with incident energy. We conclude that we can enhance the contrast of the beam profile by optimizing the applied bias voltage.

Paper Details

Date Published: 22 August 2001
PDF: 9 pages
Proc. SPIE 4344, Metrology, Inspection, and Process Control for Microlithography XV, (22 August 2001); doi: 10.1117/12.436786
Show Author Affiliations
Yeong-Uk Ko, Univ. of Tennessee/Knoxville (United States)
David C. Joy, Univ. of Tennessee/Knoxville and Oak Ridge National Lab. (United States)
Neal T. Sullivan, Schlumberger Semiconductor Solutions (United States)
Martin E. Mastovich, Schlumberger Semiconductor Solutions (United States)


Published in SPIE Proceedings Vol. 4344:
Metrology, Inspection, and Process Control for Microlithography XV
Neal T. Sullivan, Editor(s)

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